Manufacturing Industry
60-nm flash memory.(NEW AND NOTABLE PRODUCT DESIGN)(Brief Article)
Design News, December, 2004
Samsung 60-nm 8-Gbit NAND Flash Memory. The semiconductor industry's first 60-nm 8-Gbyte NAND Flash memory device targets data storage for mobile appliances. The 60-nm process technology achieves approximately 30 percent reduction in cell size over the 70-nm 4-Gbyte NAND Flash memory developed in the previous year. Engineers used a 3D cell transistor structure and high-dielectric gate insulating technology that minimizes the interference level between cells. By taking advantage of the most widely used lithography technology, the reduced the cost per bit by 50 percent. As a result, the 8 Gbyte NAND Flash memory will allow up to 16 Gbyte of storage on a single memory card. For more information on Samsung's 60-nm Flash Memory, go to http://rbi.ims.ca/3860-545.
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