Production XPS platform turbocharges thin-film metrology. (Inspection, Measurement & Test).(X-ray photoelectron spectroscopy )
Semiconductor International, March, 2003 by Braun, Alexander E.
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Almost since the first semiconductors made their appearance, [SiO.sub.2] has been the material of choice for the gate dielectric. As scaling has progressed to improve functionality and performance, transistor size has followed and, with it, so has the gate dielectric -- diving from shrink to smaller shrink.
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Unfortunately, as [SiO.sub.2] gets thinner, the performance manufacturers expect of their leading-edge devices is degraded. For shrinks to continue, major problems that must be overcome involve an increase in leakage current and boron diffusion from the doped gate ...
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