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Enhanced copper ECP for 45 nm devices.

Semiconductor International,  October, 2005  by Hafezi, Hooman; Huang, Yi-Chiau; Zhang, Amy; Singh, Saravjeet; Ngai, Chris

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A new copper electrochemical plating (ECP) process was developed to improve gap fill, mounding and defect performance for 45 nm node designs. We examined high-precision wafer immersion dynamics, including a waveform solution correlated with the plating head movement, for enhanced control during the plating process's first critical seconds. This technology was used with a new set of plating additives to improve gap-filling performance.

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In addition, the use of an encapsulated thief electrode makes it possible to modify current density near the edge of the wafer, compensating for ...

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