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DARPA backs next-generation InP chips.
Australasian Business Intelligence, August, 2003
Aug 20, 2003 (Electronics News - ABIX via COMTEX)
Vitesse Semiconductor is one of three companies working on a defence contract. The $US6 million ($A8.75 million) contract for the US Defense Advanced Research Projects Agency (DARPA), which Vitesse is undertaking in collaboration with the University of Illinois and BAe Systems, involves the development of communication integrated chips. It will involve the application of Vitesse's Indium Phosphide (InP) Heterojunction Bipolar Transmitter (In P HBT) technology. The chips being developed under the DARPA contract are expected to be use in "defence and radar applications".
Publication Date: 14 August 2003
VITESSE SEMICONDUCTOR:
BAE SYSTEMS PLC:
UNIVERSITY OF ILLINOIS:
DEFENSE...
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