High linearity enhanement-mode PHEMT FET. (Semiconductors).

ECN-Electronic Component News, May, 2003

Agilent Technologies Inc. has announced a high linearity E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) field effect transistor (FET) designed for low noise, high dynamic range operation in cost-sensitive wire less infrastructure applications that operate between 450 MHz and 6 GHz. At 3M 30 mA and 2 GHz, the single voltage Agilent ATF-58 143 E-pHEMT FET features 0.5 dB noise figure with 16.5 dB associated gain, combined with 30.5 dBm third-order output intercept point (OIP3) and 16.5 dBm linear output power (1 dB gain compression). It is well suited for the first and second stage of front-end LNAs (lownoise amplifiers) in cellular/PCS/WCDMA base station, wireless local loop, fixed wireless access and other high-performance applications...

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