Ultra fast, 1 Gb Flash memory for next-generation mobile phones.(Integrated Circuits)

ECN-Electronic Component News, December, 2004

Samsung Electronics has announced its development of a 1 Gigabit (Gb) OneNAND[TM] Flash memory device using the company's advanced 90 nm process technology. By introducing this high density OneNAND Flash memory device, Samsung expands its diverse portfolio of Flash technology to fully support the advanced multimedia features associated with next generation handsets and other mobile applications. Samsung's OneNAND device, providing a new Unified Storage concept, combines the high speed data read function of NOR Flash and the advanced data storage of NAND Flash. The single chip is based on NAND architecture integrating buffer memory and logic interface. Featuring a 66 MHz synchronous interface and cache read function that enables an enhanced read performance of 108 MBps,...

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