General Semiconductor.

RCR Wireless News, March, 2001

General Semiconductor Inc. extended its MOSFET portfolio with three new part numbers targeted at portable equipment and wireless applications. The GF2301, GF2304 and GF3443 use the company's proprietary GENFET trench technology, which has high cell density and results in low on-resistance, low gate charge, and fast switching speeds.

The GF2304 is an N-channel enhancement mode MOSFET, while the GF2301 and GF3443 are P-channel. They all have low threshold voltages to support logic-level input gate voltages. www.gensemi.com.

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