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LDMOS RF power transistor.(Technology Award)(Laterally Diffused MOS, Koninklijke Philips Electronics N.V.)

Wireless Design & Development, November, 2004

A major advance in Laterally Diffused MOS (LDMOS) technology that, for the first time, will allow Wideband-CDMA (W-CDMA) base station manufacturers to break through the 30% efficiency barrier for RF power amplifier output stages is announced by Royal Philips Electronics. The rollout of W-CDMA cellular infrastructures for the delivery of advanced multimedia and data services has created a high demand for efficient base station amplifiers that combat the inherent power inefficiencies of W-CDMA systems. By achieving an RF power output efficiency of more than 30%, Philips' new fifth-generation LDMOS technology raises W-CDMA efficiency by as much as 4%. Using this technology for W-CDMA base stations, RF power amplifiers can therefore reduce the power consumption by more...

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