Manufacturing Industry
Gallium nitride-based device operates at higher frequency. (Polymers/Ceramics).
Advanced Materials & Processes, December, 2002
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Gallium nitride-based semiconductor materials have reportedly been developed for higher-performance electronic devices by RF Micro Devices (RFMD), Charlotte, N.C. According to the company, GaN has higher capability than silicon, gallium arsenide, or indium phosphide. GaN transistors are said to have at least ten times the power density of conventional gallium arsenide and silicon devices.
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In addition, GaN-on-sapphire high electron-mobility transistors (HEMT) offer high-frequency performance and power performance superior to GaN-on-silicon. The company has begun the qualification ...
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