Atom-scale images enable prediction of SiN properties.(Materials Science/R & D)

Advanced Materials & Processes,  August, 2004  

Tags: atom, Oak Ridge National Laboratory, silicon

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An imaging technique that reveals, in world-record 0.7 angstrom resolution, the preferred location of atoms within a silicon nitride ceramic has been reported by Oak Ridge National Laboratory, Oak Ridge, Tenn. The images of silicon nitride were made with ORNL's 300-kilovolt Z-contrast scanning transmission electron microscope, aided by an emerging technology called aberration correction, in which errors introduced by imperfections in the electron lenses are corrected by a computer.

The researchers found that the atom-scale images match, almost exactly, the positions predicted by ...

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