Silicon carbide substrate is free of micropipe defects.(MATERIALS SCIENCE/ R & D)

Advanced Materials & Processes,  December, 2005  

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Silicon carbide substrates that are completely free of micropipe defects have reportedly been developed by Intrinsic Semiconductor, Dulles, Va. In addition, the company has begun production of initial lots of 100-mm (4-in.) SiC substrates. Silicon carbide has characteristics inherently superior to silicon and other semiconductor materials in high-power, high-frequency, and high-temperature applications.

However, micropipe defects, which are voids that permeate SiC crystals as they grow, have been a leading contributor to SiC's low yields and associated high costs. The ...

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