Manufacturing Industry
Reactor produces six-inch GaN-on-sapphire wafers.(PROCESS TECHNOLOGY)
Advanced Materials & Processes, March, 2006
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A reactor that can quickly produce dozens of high-quality six-inch GaN-on-sapphire or SiC wafers in each batch has reportedly been developed by Technologies and Devices International Inc., Silver Spring, Md., in a program funded by the Missile Defense Agency. A hydride vapor-phase epitaxy (HVPE) process was developed to reduce the costs of GaN components used for advanced radar and power systems.
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Through extensive modeling and testing, TDI developed a HVPE reactor that can produce more than a dozen high-quality, 2-inch-diameter wafers at the same time. TDI has also created the ...
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