Hafnium-based material replaces silicon dioxide.(METALS/POLYMERS/CERAMICS)(Brief article)

Advanced Materials & Processes,  April, 2007  

Tags: Intel Corp., silicon, transistor

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An innovative combination of new materials that drastically reduces transistor leakage and increases performance in its 45-nm process technology is reportedly under development at Intel Corp., Santa Clara, Calif. One material has a property called high-k, for the transistor gate dielectric. A new alloy has been designed for the transistor gate electrode.

Transistor gate leakage associated with the ever-thinning silicon dioxide gate dielectric is recognized by the industry as one of the most formidable technical challenges facing Moore's Law. To solve this critical issue, ...

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