Manufacturing Industry
Models to analyze behavior of hafnium dioxide.(GLOBAL ECONOMY)(Brief article)
Advanced Materials & Processes, May, 2007
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> IBM's Zurich Research Laboratory has for the first time used advanced supercomputer-based models to more deeply understand and master the complex behavior of a promising new material, hafnium dioxide, in silicon transistors. The new material is key to the company's recently-announced "high-k metal gate" technology, the first major change to the transistor since the emergence of silicon ...
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