InP-based HBT technology for next-generation lightwave communications. (heterojunction bipolar transistor)

Microwave Journal, June, 1998 by Block, T.R.; Cowles, J.; Gutierrez-Aitken, A.; Kobayashi, K.W.; Oki, A.K.; Streit, D.C.; Tran, L.T.

InAlAs/InGaAs-InP heterojunction bipolar transistor (HBT) technology offers high device speed, low 1/f flicker noise and monolithic integration of 1.55 [[micro]meter] InGaAs photodetectors making them well suited for next-generation, high data rate optoelectronic communication links. Application toward next-generation [greater than] 40 Gbps communication systems is discussed, and state-of-the-art receiver capability is presented.

Today's state-of-the-art performance in optoelectronic communications concentrates on 40 Gbps optoelectronic data links and greater using III-V semiconductor technologies, including GaAs- and InP-based MESFET, high electron mobility transistor (HEMT) and HBT technologies. InP-based technologies are attractive because they have the...

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