Manufacturing Industry
Low temperature processing of silicon carbide substrates.(Electronics)
Advanced Ceramics Report, January, 2004
Rohm Co Ltd, Japan, has developed a simpler method of fabricating semiconductor devices from silicon carbide (SiC). Using the technique, the company plans to begin manufacturing and shipping Schottky barrier diodes made from SiC in first-quarter 2004, and eventually to use the ceramic for other devices, including transistors.
Rohm's SiC Schottky barrier diode is only one-quarter of the size of a comparably performing silicon-based device and can operate at temperatures up to 400[degrees]C, some four times higher than a silicon-based Schottky barrier diode can withstand.
Moreover, the device consumes 10% of the power, can withstand currents of 600 V, and switch current flow in 10 ns, which is about one-third that of a silicon-based equivalent.
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