Manufacturing Industry

Doping is key to electronic disorder.(SUPERCONDUCTORS)

Advanced Ceramics Report, October, 2005

Joint research by US and Japanese physicists has demonstrated, for the first time, that dopant atoms lead to electronic disorder in bismuth strontium calcium copper oxide ([Bi.sub.2][Sr.sub.2]Ca[Cu.sub.2][O.sub.8 x]), also known as Bi-2212.

Physicists have long suspected that dopant atoms are the reason for the electronic disorder observed in Bi-2212, but there was no experimental evidence. Now, Professor J.C. Seamus Davis of Cornell University, USA, and co-workers have used a high-energy scanning tunnelling microscope (STM) to show that this disorder is caused by atomic-scale impurity states, and say that it is highly likely that these impurity states are actually the dopant atoms.

Doping generally involves adding impurities or charge carriers--which...

Premium Content Partnership | HighBeam Research provides an in-depth online archive library of reference works. HighBeam Research

 

BNET TalkbackShare your ideas and expertise on this topic

Please add your comment:

  1. You are currently: a Guest |
  2.  

Basic HTML tags that work in comments are: bold (<b></b>), italic (<i></i>), underline (<u></u>), and hyperlink (<a href></a)