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Aluminium nitride tunnel barriers for Josephson junctions.(ELECTRONICS)

Advanced Ceramics Report, December, 2005

Researchers at California Institute of Technology (Caltech), USA, have demonstrated a novel technique for making thin (less than 2 nm) layers of aluminium nitride ([AlN.sub.x]) for use as tunnel barriers in Nb/Al-[AlN.sub.x]/Nb superconductor/ insulator/superconductor (SIS) Josephson junctions. The technique is based on accelerating positive nitrogen ions on an aluminium layer.

[AlN.sub.x] is the present material of choice for tunnel barriers because it offers the required combination of low leakage current at high current density and greater thermal stability.

The ion beam technique developed is an alternative to standard plasma or reactive sputtering techniques; its main benefit is that it is independent of the electrical conditions of the substrate...

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