Manufacturing Industry
Fullerene transistor breaks records.(ELECTRONICS)
Advanced Ceramics Report, November, 2007
High-performance field effect transistors made from fullerene have been successfully developed by scientists at the Georgia Institute of Technology (Georgia Tech), USA. The devices, which are very stable, have electronmobility values that outperform amorphous silicon, low threshold voltages and large on-off ratios. They can also be fabricated at room temperature, which makes them compatible with any substrate, including flexible plastic.
Scientists have long been interested in making field-effect transistors (FETs) from organic semiconductors that can be processed on various substrates. Among electron transport organic semiconductors, fullerenes are the material of choice. Indeed, previous experiments have shown that organic FETs made from fullerene can have...
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