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Industry: Email Alert RSS FeedIntel and Micron introduce sub-40nm NAND memory device
Worldwide Computer Products News, May 30, 2008
Worldwide Computer Products News-30 May 2008-Intel and Micron introduce sub-40nm NAND memory device(C)1995-2008 M2 COMMUNICATIONS LTD http://www.m2.com
Silicon chip company Intel Corporation (Nasadq: INTC) and Micron Technology Inc (NYSE:MU), a provider of advanced semiconductor solutions, introduced on Thursday (29 May) the industry's first sub-40nm NAND memory device, unveiling a 34nm 32Gb multi-level cell chip.
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The process technology was jointly developed by Intel and Micron and manufactured by the companies' NAND flash joint venture, IM Flash Technologies (IMFT). According to the companies, the 32Gb NAND chip is the only monolithic device at this density that fits into a standard 48-lead thin small-outline package (TSOP), providing a cost-effective path to higher densities in existing applications. In addition, the introduction of 34nm process technology is expected expand the value proposition and accelerate the adoption of solid-state drive (SSD) solutions in computing platforms.
The companies also said that they plan to introduce lower density multi-level cell products including single-level cell products by the end of 2008.
The 34nm chips will be manufactured on 300mm wafers, each producing approximately 1.6Tb of NAND. Shipments of customer samples begin in June 2008 and mass production is expected during the second half of 2008. No pricing details were disclosed.
((Comments on this story may be sent to info@m2.com))
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