IDT Announces PC Cache Solution With Breakthrough Fusion Memory Technology

Business Wire, March 29, 1996

SANTA CLARA, Calif.--(BUSINESS WIRE)--March 29, 1996--Integrated Device Technology, Inc. (IDT), a leader in PC cache solutions, today introduced the first product using its new Fusion Memory technology, the IDT71F432, a 32K x 32 synchronous pipelined-burst cache memory device, for use with new PC chipsets from the industry's major chipset suppliers.

Fusion Memory technology allows IDT's 71F432 cache memory device to replace existing synchronous 32K x 32 pipelined-burst SRAMs with equal performance, one-third the die size and one-third the active power.

Fusion Memory Establishes New Cost/Performance Curve

"IDT's new Fusion Memory technology brings together the high performance of SRAM and low manufacturing costs of DRAM to achieve an entirely new cost/performance point," said Stewart Sando, IDT's director of SRAM marketing. "Fusion Memory allows IDT to solve high-performance system functions, such as secondary cache, at significantly lower cost and power levels, with much smaller areas of silicon. The IDT71F432 demonstrates the power of Fusion Memory and IDT's ability to bring unique, cost-effective solutions to the design challenges facing customers."

Through Fusion Memory, IDT brings to the PC market the first cache solution utilizing single-transistor memory cell architecture. Compared to traditional SRAMs which utilize a four- or six-transistor cell architecture, the 71F432 is implemented as a one-transistor memory cell, resulting in a 70 percent reduction in die size. This allows IDT's Fusion Memory devices to support significantly higher levels of integration and lower costs than were possible using traditional SRAM technology.

"Adding cache to a system boosts performance 20 percent over systems without cache. With Fusion Memory, IDT now enables manufacturers to offer this performance benefit at a lower incremental cost, making it economical for use in low-end systems that might otherwise be cacheless," added Sando. "With a much smaller die size, this new memory device promises designers of PCs an upgrade path to even larger cache sizes. And, since it is one-third the power of traditional SRAM-based secondary cache, it is well suited for use in mobile applications."

Fusion Memory Cache Device is Plug-compatible With MoSys' MCache

Compatible with MoSys' MCache device, IDT's 71F432 cache memory replaces industry standard synchronous 32K x 32 SRAMs and provides 3-1-1-1 burst cache performance with less than a 0.5 percent performance reduction for refresh. This Fusion cache device supports Pentium processors operating at up to 166MHz and runs at speeds of 66 and 75MHz, with clock-to-data out times of 8.5ns and 7ns, respectively.

Pricing, Packaging and Availability

IDT is currently sampling the IDT71F432 with production quantities available in May, 1996. The 71F432 is packaged in a JEDEC-standard 100-pin rectangular plastic thin quad flat pack (TQFP) and will be priced at less than $5.00 each in volume by the end of calendar 1996. IDT's Fusion cache memory device is also offered as 256KByte DIMM modules, the IDT7MPV6204/05. IDT is currently sampling the 7MPV6204/05 Fusion Memory modules, with production quantities available beginning May, 1996.

About IDT

Integrated Device Technology, Inc. (IDT) designs, manufactures, and markets CMOS VLSI integrated circuits (ICs) for a range of growth markets, including desktop computer, workstation/server, data communications and office automation. IDT offers products in four key areas: high-speed SRAMs, RISC microprocessors, specialty memories and high-performance logic. The company's product areas are synergistic and provide solutions that optimize the cost and performance of microprocessor-based systems. Headquartered in Santa Clara, Calif., IDT employs approximately 3,875 people worldwide.

This press release contains forward-looking statements. Actual results may differ materially from those stated depending on a number of factors, including but not limited to product supply and demand, order cancellations, pricing, competition and manufacturing yields, particularly as they affect SRAM products and the Company's ability to obtain and fill orders from inventory during the balance of the quarter. Please read the section titled, "Factors Affecting Future Results" in the Company's most recent Form 10Q on file with the Securities and Exchange Commission.

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Note to Editors: Fusion Memory is a trademark of Integrated Device Technology, Inc. MCache is a trademark of MoSys Incorporated. Pentium is a trademark of Intel Corporation.

CONTACT: Integrated Device Technology Inc.

Tami Maggio, 408/492-8699

Caroline Phillips, 408/492-8620