Nanya Technology Opens Memory Design Center in Houston

Business Wire, Oct 7, 1998

SAN JOSE, Calif.--(BUSINESS WIRE)--Oct. 7, 1998--Nanya Technology Corporation USA today announced that it has opened a new research and development center in Houston, Texas to design advanced memory technology.

Specifically, the center will develop DRAM, SDRAM and other advanced memory products for the wireless, networking, computing, and multimedia markets.

"This investment in R & D is part of Nanya's commitment to provide leading-edge technology to our customers at very competitive prices," said Ken Hurley, vice president and general manager, Nanya Technology Corporation USA. "By locating our new facility in Houston we can benefit from the pool of technical talent in Texas, in addition to what we have already established in Silicon Valley. We also plan to increase our investment in the Houston design center in the near future."

The Houston facility reports to Nanya Technology's U.S. office, which opened in San Jose, California in July of 1997. The San Jose office manages sales and marketing activities, as well as product design, for the U.S. market. Taiwan-based Nanya Technology Corporation is currently building its second semiconductor fab in Linkao, Taiwan. For more information about Nanya's memory products call 800/509-8992, or visit the company's website at www.nanya.com.

About Nanya Technology Corporation

Nanya Technology Corporation is a leading provider of advanced DRAM products and state-of-the-art semiconductor foundry services. Based in Taoyuan, Taiwan, Nanya Technology was founded in March of 1995 and semiconductor production started in May of 1996.

A second fab is currently under construction in the Linkao High Tech Industrial Park in Linkao, Taiwan. The company's San Jose, California location provides support to its U.S. customers. Nanya Technology is backed financially by Taiwan's largest industrial group, Formosa Plastics Group.