Philips Semiconductors Announces BiMOS3D Process for Integrated Circuits Dedicated to Motion Control

Business Wire, Sept 22, 1998

SUNNYVALE, Calif.--(BUSINESS WIRE)--Sept. 22, 1998--

Process Improves Hard Disk Drive Performance;

Reduces Overall System Cost

Philips Semiconductors today announced the availability of its BiMOS3D process for the design of motion control integrated circuits (ICs) applied in hard disk drives (HDDs). Volume production of ICs using the mixed signal BiMOS3D technology is scheduled to begin in Q4 1999.

Combining high voltage lateral transistors with intelligent digital functions and analog power components in a single die, BiMOS3D is designed to improve performance and reduce overall system costs.

"The need to reduce cost per device and optimize mass storage architecture has driven the development of BiMOS3D," said Arnaud Moser, business line marketing manager for motion control ICs. "BiMOS3D can handle high currents, while maintaining process functionality. Philips Semiconductors believes this process represents the best all-around option for HDD designers and manufacturers because of the combined digital intelligence and analog power processes on a single chip."

BiMOS3 produces a type of integrated circuit using both bipolar and CMOS technologies. Philips Semiconductors has been using BiMOS3 to produce the one-chip TV ICs, which have provided a significant performance increase and cost reduction to TV setmakers. The proven BiMOS3 process has been shipping in volume for two years.

While BiMOS3 provides 75 percent of the process required for motion control ICs, it does not address the high power requirements for HDD motion controls, hence the custom development of BiMOS3D. With BiMOS3D, the logic gates are primarily made of CMOS, but the output stages use lateral bipolar DMOS transistors to accommodate the high current, high voltage and high power requirements associated with controlling HDD disk and arm motors. Performance Specifications

BiMOS3D specifications clearly identify the inherent power, speed, high integration and cost trade-offs that distinguish the process. -0-

MAIN FEATURES OF BIMOS3D        UNIT                      VALUE
Mask Count                                              20
Density Digital Cells                Gate/mm(2)              2700
CMOS Effective Gate Length        (mu)m                      0.5
Bipolar                         Type                V and LNPN, V and LPNP
HV CMOS                         Type                      ENMOS, EPMOS
LDMOS Power                        mOhm.mm(2)           less than 35
EN-EPMOS Power                        mOhm.mm(2)           less than 100
Vt LDMOS                        V                      0.9
Diffused Resistance                KOhm/sq               2,75
High Ohmic Poly                 Ohm/sq                      220
Capacitor                        nF/mm(2)              3.86
Zener Diode                        V                      5
BP/BN Isolation                                       YES
IMMUNITY                        Latch-up              Very High
                             Cross-Talk            Very High
ESD PROTECTIONS                                       YES

-0- Pricing and Availability

Custom design-ins are underway with samples expected in Q2 1999. Volume production of BiMOS3D ICs is scheduled to begin in Q4 1999. About Philips Semiconductors

Philips Semiconductors, Inc., a subsidiary of Philips Electronics North America Corporation and an affiliate of Royal Philips Electronics NV, headquartered in Eindhoven, The Netherlands, is the ninth largest semiconductor supplier in the world. Philips Semiconductors' innovations in digital audio, video and mobile technology position the company as a leader in the consumer, multimedia and wireless communications markets. Sales offices are located in all major markets around the world and are supported by regional customer applications labs. Additional information on Philips Semiconductors can be found on the home page at www.semiconductors.philips.com.