Global Communication Semiconductors Inc. Announces Breakthrough in InP HBT Process Development; GCS, a Pure Play Compound Semiconductor Foundry, Is Now Offering InP HBT

Business Wire, August 13, 2001

Business Editors and High Tech Writers

TORRANCE, CALIF.--(BUSINESS WIRE)--Aug. 13, 2001

Global Communications Semiconductor Inc. (GCS), a pure-play compound semiconductor wafer foundry, today announced that it has made a significant breakthrough in the development of a proprietary InP (Indium Phosphide) HBT foundry process.

"The performance advantages of InP HBT are well known. The principal challenge is to provide a high performance technology that is also reliable and manufacturable," remarked Chanh Nguyen, chief technology officer of GCS.

"With our proprietary device design and fabrication process technology, we have addressed this challenge in a fundamental way. GCS' proprietary InP HBT technology uses a novel epi design with a carbon-doped base to ensure long-term reliability. GCS has also developed a low-loss interconnect technology for high-speed circuits." continued Dr. Nguyen.

GCS' current baseline InP HBT process has 1 micron emitter width with Ft and Fmax above 160 GHz operating at a current density below 75 kA per cm sq. By driving these baseline devices at higher current densities, GCS has demonstrated an Ft above 200 GHz. Another feature of this proprietary process is that the emitter width is scalable to sub micron size.

This scalability enables GCS to reduce device geometry and power dissipation while increasing the circuit speed. With this technology, GCS is not only capable of meeting OC-768 requirements, but is also well positioned to serve the industry in future applications at higher speeds.

"GCS has provided advanced pure-play compound semiconductor foundry services to both Design Houses and IDM's (Integrated Design and Manufacturers) for three years now. GCS' proprietary InGaP HBT process is currently being used for power amplifiers in handsets, high voltage power amplifiers in base stations and for 10Gb/s TIAs and laser drivers," commented Owen K. Wu, chief executive officer and president of GCS.

"Therefore, it was a natural progression for GCS to develop an InP process to address the 40Gb/s requirement of OC-768 and power amplifiers for 3G handset applications. As the only pure-play InP foundry, GCS will play a pivotal role to assist companies to bring 40Gp/s components and 3G power amplifier products to market. Our optoelectronics group is currently delivering 1.31 and 1.55 micron InP based PiN Diodes.

"By combining our optoelectronics with our InP HBT process, GCS is now able to address OEIC (Opto Electronic Integrated Circuit) applications. We are now seeking companies who are interested in targeting OEIC applications," continued Dr. Wu.

Global Communication Semiconductors Inc., based in Torrance, is an ISO 9002 certified company. GCS provides compound semiconductor foundry services to the wireless telecommunication and high-speed networking industries. GCS currently offers foundry service for both HBT InGaP and InP and PHEMT processes. Additionally, GCS provides epitaxial wafers, optoelectronic devices such as VCSELs and PIN diodes for fiber optic communication market and is delivering SAW filter foundry service for handset applications.