Business Services Industry
Micron Technology, Inc., Announces Industry's First 1.5 Volt 32 Megabit Flash Device
Business Wire, May 30, 2001
Business Editors, Technology Writers
BOISE, Idaho--(BUSINESS WIRE)--May 30, 2001
Micron Technology, Inc., (NYSE:MU) today announced sample availability of the industry's lowest voltage 32 Mbit wireless flash component. Micron's 32 Mbit device supports various operating modes including page and burst, while operating with a power supply as low as 1.425V.
Micron is the first memory manufacturer to produce a 32 Mbit read-while-write Burst/Page Flash device operating at 1.5V. This device (MT28F322D15FH) is specifically designed for mobile phones, meeting the performance and low power needs of next generation mobile phone platforms.
"Micron took a major step forward in our capabilities to meet the challenging needs of our customers who are designing 3G platforms today," said Kevin Widmer, Director of Strategic Marketing for Wireless Memory Products. "These customers require very high throughput from the memory subsystem, while at the same time trying to minimize power consumption. The digital Base Band (DBB) chipsets used in 3G platforms are moving to operating voltages as low as 1.5V. Micron's new low-power, 32 Mbit device allows a direct interface between the DBB and the Flash, achieving the minimum power consumption while operating at a burst frequency as high as 40 MHz."
Offering dual-bank architecture, Micron's 32 Mbit Burst/Page flash device allows for simultaneous read-while-write operation. It operates with nominal supply voltage of 1.5V /- five-percent (1.425V minimum and 1.575V maximum), with an extended input/output voltage range of 1.65V to 1.95V, thus allowing a direct interface with other devices in the system unable to operate at a lower voltage. This 32 Mbit device is organized as a 2 Mbit X 16 and is manufactured on Micron's 0.18-micron process technology. Other features include: an asynchronous access time of 100 nanoseconds (ns), a page access time of 30ns and a 25ns burst rate when used in burst mode; a 58-ball (MT28F322D15FH) FBGA package with 0.75 pitch; an extended temperature range; and a one-time-programmable (OTP) area to accommodate security codes.
Micron Technology, Inc., and its subsidiaries manufacture and market DRAMs, very fast SRAMs, Flash Memory, other semiconductor components, and memory modules. Micron's common stock is traded on the New York Stock Exchange (NYSE) under the MU symbol. To learn more about Micron Technology, Inc., visit its web site at www.micron.com.
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