Hynix Announces 54nm 1Gb DRAM Validation

Business Wire, Nov 22, 2007

ICHEON, South Korea -- Hynix Semiconductor Inc. ("Hynix") today announced the validation per Intel procedures and specifications of 54nm 1Gb DDR2 DRAM. Hynix is one of the first suppliers in the industry to develop a 50nm-class process technology.

The finer process design-rule of this 54nm product reduces die size by approximately 40% compared to 60nm-class process technology, significantly reducing costs and improving speed-power characteristics. Hynix "three-dimensional transistor" architecture and "W-DPG (Tungsten-Dual Poly Gate)" technologies minimize current leakage to further reduce overall power consumption.

This 54nm technology will be used to manufacture both DDR2 and DDR3 DRAMs in 1Gb and 2Gb densities beginning in the second half of next year.

With growing demand for high capacity memory, Hynix plans to consistently enhance production capacity on the 54nm products to meet customer demand. This technology will also be used to build Graphics DRAM and Mobile DRAMs in the future.

About Hynix Semiconductor Inc.

Hynix Semiconductor Inc. (HSI) of Icheon, Korea is the world's top tier memory semiconductor supplier offering Dynamic Random Access Memory chips ("DRAMs") and Flash memory chips to a wide range of established international customers. The Company's shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about Hynix is available at www.hynix.com