Innovative Silicon's CEO Mark-Eric Jones to Present at IET & GSA International Semiconductor Forum

Business Wire, May 9, 2008

To Share Perspective as "Times Are Changing: Funding, IPO, and M&A Education for Today's Environment" Panelist

SANTA CLARA, Calif. -- Innovative Silicon Inc. (ISi), developer of the Z-RAM[R] zero-capacitor floating body memory technology, today announced that its CEO, Mark-Eric Jones, will present on the "Times are Changing: Funding, IPO and M&A Education for Today's Environment" panel at the 5th Annual IET & GSA International Semiconductor Forum. The conference is taking place May 14 - 15 at the ExCel London in London, England. For more information, see http://ietfsasemiconductorforum.com/2008/delegate/programme.asp

The IET & GSA International Semiconductor Forum brings together executives and engineers from companies worldwide for a unique relationship building opportunity to discuss key business issues, challenges and solutions to the most pressing issues facing the semiconductor industry.

The "Times are Changing: Funding, IPO and M&A Education for Today's Environment" panel is scheduled for Thursday, May 15 from 11:30 a.m. to 12:30 p.m. Charles Cotton, Non-Executive Director of Library House is moderating the panel that will also include panelists from other leading semiconductor and venture capital firms including: Dialog Semiconductor, 3i, and Enlightened Technology, Ltd. Mr. Jones will bring to the panel his experiences taking several companies public. He will also share how he is taking Innovative Silicon, currently a privately-held company, to the next level. ISi has orders from renowned customers and has received a total of $47M in funding to date.

About Innovative Silicon

Innovative Silicon Inc. (ISi) is the inventor and licensor of the Z-RAM[R] ultra-dense memory technology for stand-alone DRAM and embedded memory applications. Z-RAM is the world's lowest-cost semiconductor memory technology - simpler to manufacture than DRAM, and a fraction the size of SRAM. ISi and the Z-RAM technology have received numerous industry awards, including the World Economic Forum's selection of ISi as a 2008 Technology Pioneer, and by the IEEE Spectrum Magazine selection of Z-RAM as the 2007 "Emerging Technology Most Likely to Succeed." Z-RAM is a "Zero Capacitor," true single-transistor floating body memory that eliminates the complex capacitor found in today's DRAM technologies - the fundamental roadblock to Moore's Law scaling. Z-RAM provides semiconductor manufacturers with a solution to ultra-small manufacturing processes which dramatically lowers semiconductor costs. The Z-RAM memory technology has been licensed by Hynix Semiconductor for use in its DRAM chips, and by AMD for use in microprocessors. Since 2003, the company has closed three funding rounds totaling $47 million, received over 25 patents on the technology, developed test chips in multiple technologies from 90nm to 32nm, and has established global R&D and support centers in Europe, Asia and North America. For more information see www.z-ram.com.

Z-RAM is a registered trademark of Innovative Silicon Inc. All other trademarks and registered trademarks are the property of their respective owners.