Hyundai Electronics Samples 3G DDR SDRAM Memory Device

Electronic News, March 12, 2001

HYUNDAI ELECTRONICS Industries Co. Ltd. (HEI) today revealed that it has produced samples of l28Mbit double data rate (DDR) SDRAM using a 0.18-micron process technology. The 3G memory device meets the DDR266 and PC-2100 standards and runs at 133MHz on 2.5V, Ichon, South Korea-based HEI said. The memory chip is designed for low-power applications such as consumer and industrial electronics and networking and telecommunications equipment that require high bandwidth and large memory density, the company said.

"DDR is already proving its worth in the high-end server, desktop PC and portable PC arenas," said Farhad Tabrizi, vice president of HEI worldwide memory marketing, in a statement. "There's no question that the DDR platform is ready for widespread industry adoption. The platform has been fully simulated and validated at the second-generation level and we're now ready to aggressively ramp up with this latest third-generation device. This will provide the most cost-effective platform for the next two years."

The DDR SRAM is organized as four banks of 2,097 bits (l52bits x l6bits). It offers fully synchronous operations referenced to both rising and falling edges of the clock, the company said. HEI said it plans to release the memory, manufactured at HEI's Ichon facility, next quarter.