Samsung debuts 90nm process technology - News Flash - Samsung Semiconductor

Electronic News, June 3, 2002

SAMSUNG SEMICONDUCTOR INC. LAST WEEK INTRODUCED ITS 90nm logic process technology for SOC designs.

According to the International Technology Roadmap of Semiconductors (ITRS), 90nm process technology is expected to be commercialized in 2004. Samsung said it would initially use the 90nm technology for mobile phone CPUs and SOC devices. The company also plans to establish its 90nm process portfolio with high-speed, low-voltage, memory-embedded and mixed signal RF features by 2003. Mass production for 90nm process technology is scheduled for 2004.

The company's 90nm technology features an ultra-thin 1.6nm gate insulating film, a 70nm effective gate length, an ultra-shallow junction technology and a copper damascene technology using low-k dielectric, the company said.

Using the 90nm technology, SOC speed is enhanced 30 percent compared to current 0.13-micron technology, Samsung said. The integration of a 1.25-square-micron SRAM cell improves memory density and reduces the chip area by 50 percent, Samsung said. The smaller chip size also reduces manufacturing costs.