Manufacturing Industry
Infineon, Canon to Develop 157nm Systems at 0.07 Micron
Electronic News, June 18, 2001
MUNICH, GERMANY-BASED INFINEON TECHNOLOGIES AG AND Tokyo-based Canon Inc. today announced plans to jointly develop photolithography systems using 157-nanometer exposure technology with fluorine (F2) laser illumination. The two companies said semiconductor device manufacturers would require such systems to develop devices using 0.07-micron (70nm) design rules.
Initially, this joint research will take place at Canon's (nyse: CAJ) Utsunomiya optical products operations facility, which will gather process data regarding actual device manufacturing for the development of 70nm compatible exposure systems. Canon's first-generation F2 exposure system is scheduled for delivery to Infineon (nyse: IFX) in the second quarter of 2003. The research will then move to Infineon's facilities for joint process development through the end of 2004.
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