Applied Materials Demonstrates 50-nanometer Defect Detection

Electronic News, Oct 2, 2000

APPLIED MATERIALS INC. has demonstrated the capability to detect reside-related critical defects as small as 50 nanometers or 0.05 micron in 7:1 high aspect ratio via structures. The Santa Clara, Calif.-based company demonstrated the technology while working with International Sematech's High Aspect Ratio Inspection (HARI) defect-evaluation program.

Applied said its multiperspective laser scanning technology detected defects in five categories identified by HARI as yield-limiting defects for sub-0.18-micron IC production. Sematech designed the test wafers used in the program and developed a special manufacturing process to induce anomalies such as defects and residue at the bottom of a single via as well as missing and partially closed single vias. Using enhanced optical technology based on laser scan and multiperspective light collection configuration for the experiments, Applied was able to consistently identify via defects in high aspect ratios of up to 7:1 as well as critical defects in gate and metal str uctures, the company said. Applied said it has incorporated much of the inspection technology used in the Sematech research in its Compass wafer inspection system, which it launched last June.