Metallization by plating for high-performance multichip modules

IBM Journal of Research and Development, Sep 1998 by Wong, K K H, Kaja, S, DeHaven, P W

33. M. Paunovic, P. J. Bailey, R. G. Schad, and D. A. Smith, "Electrochemically Deposited Diffusion Barriers," J. Electrochem. Soc. 141, 1843-850 (1994). Received April 12, 1997; accepted for publication March 20. 1998

Keith K. H. Wong IBM Microelectronics Division, East Fishkill facility, Route 52, Hopewell Junction, New York 12533 (wongkw@us.ibm.com). Dr. Wong received a Ph.D. degree in electrochemistry from the State University of New York at Buffalo in 1988. He has been working at IBM since 1987, first on plating of soft magnetic materials for storage applications at the IBM Thomas J. Watson Research Center, then on MCM-D packaging at the IBM Microelectronics Division facility in East Fishkill, New York. In 1997 he joined the Advanced Semiconductor Technology Center at East Fishkill, where he is currently working on advanced metallization techniques for semiconductor interconnections. He has been an executive committee member of the Metropolitan New York Chapter of the Electrochemical Society and Education Chairman of the Hudson Valley Branch of the American Electroplaters and Surface Finishers Society. Dr. Wong has authored or coauthored five patents as well as a series of papers on electrochemical technologies in microelectronics.

Suryanarayana Kaja IBM Microelectronics Division, East Fishkill facility, Route 52, Hopewell Junction, New York 12533 (kaja@us.ibm.com). Dr. Kaja received a Ph.D. degree in materials science and engineering from Pennsylvania State University in 1985, joining IBM in 1989. He has been working in the field of electroplating and electroless plating of different metals and alloys for more than 15 years, and is currently responsible for developing plating processes for thin-film metallization of electronic components at the Microelectronics Division facility in East Fishkill, New York. Dr. Kaja has published several papers and holds a number of patents in areas related to thin-film processing.

Patrick W. DeHaven IBM Microelectronics Division, East Fishkill facility, Route 52, Hopewell Junction, New York 12533 (dehaven@us.ibm.com). Dr. DeHaven received a Ph.D. degree in physical chemistry from Iowa State University in 1976. He joined IBM in 1980 as a Staff Engineer in the Technology Analysis group at the Microelectronics Division facility in East Fishkill, New York. He has used X-ray diffraction techniques to address a wide variety of materials issues involving both semiconductors and ceramic chip carriers. In particular, he has done extensive work in the areas of thin-film characterization, solder interconnects, and microbeam X-ray diffraction. He is currently involved in the application of X-ray reflectometry to the characterization of thin-film semiconductor materials. Dr. DeHaven has authored or coauthored 17 papers, including the recent text "X-ray Diffraction at Elevated Temperatures" with D. D. L. Chung.