IBM Journal of Research and Development

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Articles in Sep 2001 issue of IBM Journal of Research and Development

• Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography
  by Ito, H
• PREVAIL--Electron projection technology approach for next-generation lithography
  by Dhaliwal, R S; Enichen, W A; Golladay, S D; Gordon, M S; Et al
• TCAD development for lithography resolution enhancement
  by Liebmann, L W; Mansfield, S M; Wong, A K; Lavin, M A; Et al
• Review of technology for 157-nm lithography
  by Bates, A K; Rothschild, M; Bloomstein, T M; Fedynyshyn, T H; Et al
• Chemical and physical aspects of the post-exposure baking process used for positive-tone chemically amplified resists
  by Hinsberg, W D; Houle, F A; Sanchez, M I; Wallraff, G M
• Printing meets lithography: Soft approaches to high-resolution printing
  by Michel, B; Bernard, A; Bietsch, A; Delamarche, E; Et al
• Recent progress in electron-beam resists for advanced mask-making
  by Medeiros, D R; Aviram, A; Guarnieri, C R; Huang, W-S; Et al