Most Recent Articles from Journal of Electronic Materials

• Progress in ZnO Materials and Devices 

  ZnO is a wide-band-gap semiconductor material that is now being developed for many applications, including ultraviolet (UV) light-emitting diodes,...

  06/01/06 by Look, David C · More from publication

• Thermal Cycling-Induced Changes in Excess Dark Current in Very Long-Wavelength HgCdTe Photodiodes at Low Temperature 

  We have observed cooldown-to-cooldown changes in the reverse-bias dark current of some very long-wavelength (cutoff > 14 µm) HgCdTe...

  06/01/06 by Tobin, Stephen P · More from publication

• Modeling of Optical Response in Graded Absorber Layer Detectors 

  Commercial and military applications for ir detectors continually push the performance envelope to achieve the highest signal-to-noise ratio at the...

  06/01/06 by Lee, Donald L · More from publication

• Precise Arsenic Doping of HgCdTe by MBE and Effects on Compositional Interdiffusion 

  Characterization data are presented for arsenic-doped Hg^sub 1-x^Cd^sub x^Te epilayers, grown on CdZnTe substrates by molecular beam epitaxy....

  06/01/06 by Piquette, E C; Edwall, D D; Lee, D L; Arias, J M · More from publication

• A Comparison of Gamma Radiation Effects on Bromine- and Hydrazine-Treated HgCdTe Photodiodes 

  In this study, we investigated the effects of gamma radiation on ZnS/CdTe-passivated HgCdTe photodiodes that were fabricated with one of two...

  06/01/06 by Lee, Min Yung; Kim, Young Ho; Lee, Nam Ho; Lee, Yong Soo; Lee, Hee Chul · More from publication

• High-Quality Large-Area MBE HgCdTe/Si 

  HgCdTe offers significant advantages over other similar semiconductors, which has made it the most widely utilized variable-gap material in...

  06/01/06 by Peterson, J M; Franklin, J A; Reddy, M; Johnson, S M; Et al · More from publication

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