Journal of Electronic Materials

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Articles in Jun 1999 issue of Journal of Electronic Materials

• Foreword
  by Bhat, Ishwara B
• Development of dry processing techniques for CdZnTe surface passivation
  by Mescher, M J; Schlesinger, T E; Toney, J E; Brunett, B A; James, R B
• MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress
  by de Lyon, T J; Jensen, J E; Gorwitz, M D; Cockrum, C A; Et al
• Improved operability in Hg1-xCdxTe detector arrays
  by Hutchins, M A; Smith, F T J; Tobin, S P; Norton, P W
• Analysis of crosstalk in HgCdTe p-on-n heterojunction photovoltaic infrared sensing arrays
  by Musca, C A; Dell, J M; Faraone, L; Bajaj, J; Et al
• Improvement of nonlinearity and extension of wavelength region using tandem (PV+PC) type HgCdTe detector (dual-MCT) in FTIR spectrometer
  by Abe, O; Kawasaki, K; Wakaki, M
• Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes
  by Rogalski, Antoni; Ciupa, Robert
• Interrelations between defects in the Hg1-xCdxTe epilayers and their measured lattice parameters and composition
  by Mainzer, N; Lakin, E; Bahir, G; Zolotoyabko, E
• MOVPE growth of HgCdTe for high performance 3-5 mm photodiodes operating at 100-180K
  by Mitra, P; Case, F C; Reine, M B; Parodos, T; Et al
• Dependency of p-n junction depth on ion species implanted in HgCdTe
  by Ebe, H; Tanaka, M; Miyamoto, Y
• Can studies of the II-VIs profit from the use of synchrotron radiation and the DOE financial support thereof?
  by Spicer, William E; Herrera-Gomez, Alberto; Pianetta, Piero
• Initial evaluation of a valved Te source for MBE growth of HgCdTe
  by Edwall, D D; Young, D B; Chen, A C; Zandian, M; Et al
• X-ray photoelectron spectroscopy study of oxide and Te overlayers on as-grown and etched HgCdTe
  by Hirsch, L S; Haakenaasen, R; Colin, T; Ziemer, K S; Et al
• Cadmium zinc telluride substrate growth, characterization, and evaluation
  by Kestigian, M; Bollong, A B; Derby, J J; Glass, H L; Et al
• Microscopic defects on MBE grown LWIR Hg1-xCdxTe material and their impact on device performance
  by Wijewarnasuriya, P S; Zandian, M; Young, D B; Waldrop, J; Et al
• Compensation and trapping in CdZnTe radiation detectors studies by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements
  by Lee, E Y; James, R B; Olsen, R W; Hermon, H
• Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for X-ray detector applications
  by Lovergine, N; Prete, P; Cola, A; Mazzer, M; Et al
• CdZnTe substrate producibility and its impact on IRFPA yield
  by Sen, Sanghamitra; Hettich, Herbert L; Rhiger, David R; Price, Stephen L; Et al
• Analysis of CZT crystals and detectors grown in Russia and the Ukraine by high-pressure Bridgman methods
  by Hermon, H; Schieber, M; James, R B; Lee, E Y; Et al
• New techniques in SIMS analysis of HgCdTe materials
  by Wang, Larry; Zhang, Lily H; Li, Jun
• Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg1-xCdxTe detectors
  by D'Souza, A I; Wijewarnasuriya, P S; Dewames, R E; Hildebrandt, G; Et al
• Effect of compositional disorder on the optical properties of Cd1-xZnxTe
  by Suzuki, K; Seto, S; Imai, K; Sawada, T; Neukirch, U; Gutowski, J
• Absorption and photoluminescence spectroscopy of diffusion-doped ZnSe:Cr2+
  by Rablau, C I; Ndap, J -O; Ma, X; Burger, A; Giles, N C
• Large volume imaging arrays for gamma-ray spectroscopy
  by Schlesinger, T E; Brunett, B; Yao, H; Vanscyoc, J M; Et al
• Insights into MOCVD process control as revealed by laser interferometry
  by Stafford, A; Irvine, S J C; Hess, K L; Bajaj, J
• Prospects of uncooled HgCdTe detector technology
  by Tennant, W E; Cabelli, S; Spariosu, K
• Integrated multi-sensor system for real-time monitoring and control of HgCdTe MBE
  by Olson, G L; Roth, J A; Brewer, P D; Rajavel, R D; Et al
• Effect of electron transport properties on unipolar CdZnTe radiation detectors: LUND, SpectrumPlus, and coplanar grid
  by Lee, E Y; James, R B
• Low temperature thermal annealing effects in bulk and epitaxial CdxHgx1-xTe
  by Capper, P; Maxey, C D; Jones, C L; Gower, J E; Et al
• Study of CdSSe:V and CdMnTe:V photorefractive effect
  by Chattopadhyay, K; Pour, K M; UEgarievwe, S; Ndap, J O; Et al
• Optimization of dry etch process conditions for HgCdTe detector arrays
  by O'Dette, Peter; Tarnowski, Gary; Lukach, Vincent; Krueger, Martha; Lovecchio, Paul
• Effect of incident angle in spectral ellipsometry on composition control during molecular beam epitaxial growth of HgCdTe
  by Aqariden, A; Duncan, W M; Shih, H D; Almeida, L A; Bevan, M J
• Advances in comparison control for 16 mm LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60K
  by Tobin, S P; Weiler, M H; Hutchins, M A; Parodos, T; Norton, P W
• Laser ablation sampling for induction coupled plasma source quadrupole mass spectrometry of Cd-Zn-Te materials
  by Hackett, Colin; Hermon, Haim; Cross, Eilene; Doty, Patrick; Et al
• In-situ monitoring of temperature and alloy composition of Hg1-xCdxTe using FTIR spectroscopic techniques
  by Daraselia, M; Grein, C H; Rujirawat, S; Yang, B; Et al
• Recent progress in CdZnTe crystals
  by Koyama, A; Hichiwa, A; Hirano, R
• Junction depth measurement in HgCdTe using laser beam induced current (LBIC)
  by Musca, C A; Redfern, D A; Smith, E P G; Dell, J M; Et al
• Arsenic incorporation during MBE growth of HgCdTe
  by Berding, M A; Sher, A
• New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys
  by Chauvet, C; Bousquet, V; Tournie, E; Faurie, J P
• Valence band offset in HgTe/Hg1-xCdxTe superlattices
  by Becker, C R; Latussek, V; Li, M; Freuffer-Jaschke, A; Landwehr, G
• Microstructural development of directionally solidified Hg1-xZnxSe alloys
  by Cobb, S D; Szofran, F R; Jones, K S; Lehoczky, S L
• Arsenic incorporation of MBE grown Hg1-xCdxTe
  by Grein, C H; Garland, J W; Sivananthan, S; Wijewarnasuriya, P S; Et al