Bibliography for: "A microindentation technique for determining strength of solder interface with silver metallization on co-fired multilayer ceramic substrate"

Shang, Jian Ku "A microindentation technique for determining strength of solder interface with silver metallization on co-fired multilayer ceramic substrate". Journal of Electronic Materials. FindArticles.com. 29 Dec, 2009. http://findarticles.com/p/articles/mi_qa3776/is_200103/ai_n8941353/

Journal of Electronic Materials

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Articles in Mar 2001 issue of Journal of Electronic Materials

• temperature dependence of the thermal conductivity of single crystal GaN films, The
  by Lup, C; Clarke, D R; Dryden, J R
• improvement of electrical properties of Pd-based contact to p-GaN by surface treatment, The
  by Kim, Dae-Woo; Bae, Jun Cheol; Kim, Woo Jin; Baik, Hong Koo; Et al
• Inductively coupled plasma etch damage in 4H-SiC investigated by Schottky diode characterization
  by Danielsson, E; Lee, S-K; Zetterling, C-M; Ostling, M
• Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
  by Lee, C D; Ramachandran, V; Sagar, A; Feenstra, R M; Et al
• Effect of processing conditions on inversion layer mobility and interface state density in 4H-Sic MOSFETs
  by Banerjee, S; Chatty, K; Chow, T P; Gutmann, R J
• Effects of surface treatments on the electrical and the microstructural changes of Pd contact on p-type GaN
  by Kim, Jong Kyu; Kim, Chong Cook; Cho, Tae Sik; Je, Jung Ho; Et al
• Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide
  by Lee, S-K; Zetterling, C-M; Ostling, M
• Boron diffusion into 6H-SiC through graphite mask
  by Soloviev, S; Gao, Y; Wang, X; Sudarshan, T
• Foreword
  by Adesida, Ilesanmi; Redwing, Joan; Rea, Laura; Zetterling, Carl-Mikael
• Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures
  by POlyakov, A Y; Smirnov, N B; Govorkov, A V; Zhang, A P; Et al
• Influence of carrier freeze-out on SiC Schottky junction admittance
  by Los, Andrei V; Mazzola, Michael S
• Light emission from interface traps and bulk defects in SiC MOSFETs
  by Stahlbush, R E; Macfarlane, P J
• Comparison of F2 plasma chemistries for deep etching of SiC
  by Leerungnawarat, P; Lee, K P; Pearton, S J; Ren, F; Chu, S N G
• Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN
  by Kim, Jong Kyu; Kim, Ki-Jeong; Kim, Bongsoo; Kim, Jae Nam; Et al
• Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes
  by Zhang, Q; Madangarli, V; Tarplee, M; Sudarshan, T S
• Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy
  by Hsu, J W P; Lang, D V; Richter, S; Kleiman, R N; Et al
• Vanadium doping of 4H SiC from a solid source: Photoluminescence investigation
  by Koshka, Y; Mazzola, M; Yingquan, S; Pittman, C U Jr
• Chemical and morphological studies of plasma-treated integrated circuit bond pads
  by Chong, Y F; Gopalakrishnan, R; Tsang, C F; Sarkar, G; Et al
• Thermally stable Nb and Nb/Au ohmic contacts to p-GaN
  by Kim, Han-Ki; Seong, Tae-Yeon; Lee, Cheul-Ro
• Structural and electrical properties of unintentionally doped 4H-SiC epitaxial layers--grown by hot-wall CVD
  by Wagner, G; Thomas, B; Doerschel, J; Dolle, J; Irmscher, K
• A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN
  by Bright, A N; Tricker, D M; Humphreys, C J; Davies, R
• Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures
  by Bradley, S T; Young, A P; Brillson, L J; Murphy, M J; Schaff, W J
• Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures
  by Hsu, J W P; Manfra, M J; Lang, D V; Baldwin, K W; Et al
• An optimum approach for fabrication of tapered hemispherical-end fiber for laser module packaging
  by Yang, H M; Jou, D C; Chen, M H; Wu, S H; Cheng, W H
• Phase equilibria in transition metal Al-Ga-N systems and thermal stability of contacts to AlGaN
  by Schweitz, K O; Mohney, S E
• Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers
  by Saddow, S E; Schattner, T E; Brown, J; Grazulis, L; Et al
• A microindentation technique for determining strength of solder interface with silver metallization on co-fired multilayer ceramic substrate
  by Shang, Jian Ku; Huang, Rong-Fong; Wilcox, David L Sr
• effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction, The
  by Ng, H M; Harel, R; Chu, S N G; Cho, A Y
• Characterization of AlGaN/GaN structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy
  by Kang, Sangbeom; Doolittle, W Alan; Lee, K K; Dai, Z R; Et al
• Etching of silicon carbide for device fabrication and through via-hole formation
  by Khan, F A; Roof, B; Zhou, L; Adesida, L