Journal of Electronic Materials

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Articles in Apr 2001 issue of Journal of Electronic Materials

• Material and process challenges in 100 nm interconnects module technology and beyond
  by Ohba, Takayuki
• Local joule heating and overall resistance increase in void-containing aluminum interconnects
  by Shen, Y-L
• Low dielectric constant materials
  by Treichel, H
• Barrier layers for Cu ULSI metallization
  by Shacham-Diamand, Yosi
• Microstructural characterization of inlaid copper interconnect lines
  by Besser, Paul R; Szchech, Ehrenfried; Blum, Werner; Winter, Delrose; Et al
• Structure and property characterization of low-k dielectric porous thin films
  by Bauer, Barry J; Lin, Eric K; Lee, Hae-Jeong; Wang, Howard; Wu, Wen-Li
• Cu-CMP for dual damascene technology: Prestonian vs. non-prestonian regimes of Cu removal
  by Gotkis, Y; Guha, S
• Interactions between solder and metallization during long-term aging of advanced microelectronic packages
  by Ho, C E; Chen, W T; Kao, C R
• Au-Ni-Sn intermetallic phase relationships in eutectic Pb-Sn solder formed on Ni/Au metallization
  by Song, H G; Ahn, J P; Minor, A M; Morris, J W Jr
• Material and electrical properties of electroless Ag-W thin film
  by Inberg, A; Shacham-Diamand, Y; Rabinovich, E; Golan, G; Croitoru, N
• Spontaneous, non-aqueous electrochemical deposition of copper and palladium on Al and Al(Cu) thin films
  by Fang, R; Gu, H; O'Keefe, M J; O'Keefe, T J; Et al
• Fatique crack growth behavior in 63Sn-37Pb and 95Pb-5Sn solder materials
  by Zhao, J; Mutoh, Y; Miyashita, Y; Ogawa, T; McEvily, A J
• Stress testing of a recrystallizing CaO-B2O3-SiO2 glass-ceramic with Ag electrodes for high frequency electronic packaging
  by Shapiro, Andrew A; Kubota, Neil; Yu, Karl; Mecartney, Martha L
• TiN and TaN diffusion barriers in copper interconnect technology: Towards a consistent testing methodology
  by Kizil, Huseyin; Kim, Gusung; Steinbruchel, Christoph; Zhao, Bin
• Reduction of photoresist usage during spin coating
  by Chou, Fu-Chu; Wang, Min-Wen; Gong, Shih-Ching; Yang, Zen-Gi
• Microstructure examination of copper wafer bonding
  by Chen, Kuan-Neng; Fan, Andy; Reif, Rafael
• Foreword
  by Shi, Frank G; Zhao, Bin
• Influence of oxides on friction during Cu CMP
  by Liang, Hong; Martin, Jean-Michel; Lee, Richard
• Synthesis and characterization of porous polymeric low dielectric constant films
  by Xu, Yuhuan; Zheng, D W; Tsai, Yipin; Tu, K N; Et al
• Comparative study on the effect of misalignment on bordered and borderless contacts
  by Huang, J S; Oates, A S; Kang, S H; Shofner, T L; Et al
• Grain growth simulation of [001] textured YBCO films grown on (001) substrates with large lattice misfit: Prediction of misorientations of the remaining boundaries
  by Tsai, Jack W H; Ling, Shiun; Rodriguez, Julio C; Mustapha, Zarina; Chan, Siu-Wai
• Material issues in electronic interconnects and packaging
  by Subramanian, K N; Lee, A; Choi, S; Sonje, p
• Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies
  by Liliental-Weber, Z; Benamara, M; Washburn, J; Domagala, J Z; Et al
• A model for wafer scale variation of removal rate in chemical mechanical polishing based on elastic pad deformation
  by Fu, Guanghui; Chandra, Abhijit
• Phase equilibria in transition metal Al-Ga-N systems and thermal stability of contacts to AIGaN
  by Schweitz, k O; Mohney, S E
• Advanced metrology for rapid characterization of the thermal mechanical properties of low-k dielectric and copper thin films
  by Lau, S H; Tolentino, Ellie; Lim, Yuen; Tolentino, Evangeline; Koo, Ann
• Evaluation of ultra-low-k dielectric materials for advanced interconnects
  by Jin, C; Lin, S; Wetzel, J T