Journal of Electronic Materials

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Articles in May 2003 issue of Journal of Electronic Materials

• Carbon structural transitions and ohmic contacts on 4H-SiC
  by Lu, Weijie; Mitchel, William C; Thornton, Candis A; Landis, G R; Collins, W Eugene
• High-quality AIGaN layers over pulsed atomic-Layer epitaxially erown AIN templates for deep ultraviolet light-emitting diodes
  by Zhang, J P; Wang, H M; Sun, W H; Adivarahan, V; Et al
• AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO^sub 2^ gate oxide
  by Wang, C K; Chiou, Y Z; Chang, S J; Su, Y K; Et al
• Steady-state electron transport in the III-V nitride semiconductors: A sensitivity analysis
  by O'Leary, Stephen K; Foutz, Brian E; Shur, Michael S; Eastman, Lester F
• P-GaN-i-GaN/AlGaN multiple-quantum well n-AlGaN back-illuminated ultraviolet detectors
  by Teke, A; Dogan, S; He, L; Huang, D; Et al
• Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures
  by Cheng, Yung-Chen; Tseng, Cheng-Hua; Hsu, Chen; Ma, Kung-Jen; Et al
• Effect of ambient on photoluminescence from GaN grown by molecular-beam epitaxy
  by Iqbal, M Zafar; Reshchikov, M A; He, L; Morkoc, H
• InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping
  by Wen, T C; Chang, S J; Su, Y K; Wu, L W; Et al
• Effect of boron on the resistivity of compensated 4H-SiC
  by Ciechonski, R R; Syvajarvi, M; Kakanakova-Georgieva, A; Yakimova, R
• Correlational of device performance and defects in AlGaN/GaN high-electron mobility transistors
  by Zhang, A P; Rowland, L B; Kaminsky, E B; Tilak, V; Et al
• Temperature-dependent electroluminescence in InGaN/GaN multiple-quantum-well light-emitting diodes
  by Cao, X A; Leboeuf, S F; Rowland, L B; Liu, H
• GaN and other materials for semiconductor spintronics
  by Pearton, S J; Park, Y D; Abernathy, C R; Overberg, M E; Et al
• Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance
  by Zhang, A P; Rowland, L B; Kaminsky, E B; Tucker, J B; Et al
• Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers
  by Kuo, C H; Chang, S J; Su, Y K; Wu, L W; Et al
• Compositional changes in erbium-implanted GaN films due to annealing
  by Zavada, J M; Wilson, R G; Hommerich, U; Thaik, M; Et al
• Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition
  by Venugopal, R; Wan, J; Melloch, M; Kim, G; Et al
• Time-dependent characteristics of titanium-silicide contacts to 6H-silicon carbide
  by Capano, M A; Patterson, J K; Petry, L; Solomon, J S
• Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy
  by Overberg, M E; Thaler, G T; Abernathy, C R; Theodoropoulou, N A; Et al
• Foreword
  by Capano, Michael A; Pearton, Stephen J
• Long-term thermal stability of Ti/Al/Mo/Au ohmic contacts on n-GaN
  by Selvanathan, D; Zhou, L; Kumar, V; Adesida, I; Finnegan, N
• InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
  by Wu, L W; Chang, S J; Su, Y K; Tsai, T Y; Et al
• Mechanism investigation of NiO^sub x^ in Au/Ni/p-type GaN ohmic contacts annealed in air
  by Lee, Ching-Ting; Lin, Yow-Jon; Lee, Tsung-Hsin
• Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry
  by Ting, Yi-Sheng; Chen, Chii-Chang; Sheu, Jinn-Kong; Chi, Gou-Chung; Hsu, Jung-Tsung
• Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors
  by Mistele, D; Rotter, T; Horn, A; Katz, O; Et al
• Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer
  by Sheu, J K; Kao, C J; Lee, M L; Lai, W C; Et al
• properties of photo chemical-vapor deposition SiO^sub 2^ and its application in GaN metal-insulator semiconductor ultraviolet photodetectors, The
  by Chiou, Yu-Zung; Su, Yan-Kuin; Chang, Shoou-Jinn; Gong, Jeng; Et al
• Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy
  by Chang, K-C; Bentley, J; Porter, L M
• Effects of high-temperature annealing on defects and impurities in as-grown semi-insulating 4H SIC
  by Alvarez, D; Konovalov, V V; Zvanut, M E
• InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates
  by Hsu, Y P; Chang, S J; Su, Y K; Chang, C S; Et al
• Impurity effects on photoluminescence in lateral epitaxially overgrown GaN
  by Hsu, J W P; Schrey, F F; Matthews, M J; Gu, S L; Kuech, T F
• Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates
  by Tan, W S; Houston, P A; Hill, G; Airey, R J; Parbook, P J
• Two- and three-dimensional simulation of chemical vapor deposition SiC epitaxial growth processes
  by Koshka, Y; Melnychuk, G; Mazzola, M S
• High-purity semi-insulating 4H-SiC for microwave device applications
  by Jenny, J R; Malta, D P; Muller, St G; Powell, A R; Et al
• Hydrogen interaction with defects and impurities in 6H-SiC
  by Koshka, Yaroslav; Dufrene, Janna B; Casady, Jeffrey B