Wide and narrow bandgap semiconductors for power electronics: A new valuation

Journal of Electronic Materials, Jun 2003 by Hudgins, Jerry L

ACKNOWLEDGEMENT

This work was supported by the U.S. Office of Naval Research under Grant No. N00014-00-1-0131.

* See list of symbols in Appendix.

REFERENCES

1. T.P. Chow and R. Tyagi, IEEE Trans. ED 41, 1481 (1994).

2. M. Bhatnagar and B.J. Baliga, IEEE Trans. ED 40, 645 (1993).

3. B.J. Baliga, IEEE EDL 10, 455 (1989).

4. J.L. Hudgins, G.S. Simin, and M.A. Khan, IEEE PESC Rec. (Columbia, SC: University of South Carolina Press, 2002), pp. 1747-1752.

5. L.I. Berger, Semiconductor Materials (New York: CRC Press, 1997), pp. 105-181.

6. M. Levinshtein, S. Rumyantsev, and M. Shur, eds., Semiconductor Parametern, Vol. 1 (River Edge, NJ: World Scientific, 1996), pp. 1-211.

7. C.M. Wolfe, N. Holonyak, and G.E. Stillman, Physical Properties of Semiconductors (Englewood Cliffs, NJ: Prentice Hall, 1989), p. 340.

8. R.C. Marshall, J.W Faust, and C.E. Ryan, eds., Silicon Carbide-1973 (Columbia, SC: University of South Carolina Press, 1974), pp. 286-296.

9. B.J. Baliga, IEEE EDL 10, 455 (1989).

10. V.A. Dmitriev, K.G. Irvine, C.H. Carter, N.I. Kuznetsov, and E.V. Kalinina, Appl. Phys. Lett. 68, 229 (1996).

11. M. Ruff, H. Mitlehener, and R. Heibig, IEEE Trans. ED 41, 1040 (1994).

12. T.P. Chow and R. Tyagi, IEEE Trans. ED 41, 1481 (1994).

13. M. Bhatnagar and B.J. Baliga, IEEE Trans. ED 40, 645 (1993).

14. A.Q. Huang and B. Zhang, IEEE Trans. ED 48, 2535 (2001).

15. M.E. Levinshtein, S.L. Rumyantsev, and M.S. Shur, Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe (New York: John Wiley & Sons, Inc., 2001), pp. 1-185.

16. J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito, and Y. Nanishi, Appl Phys. Lett. 80, 3967 (2002).

17. V.Y. Davydov et al., Phys. Status Solidi B 230, R4 (2002).

18. S.M. Sze and G. Gibbons, Appl. Phys. Lett. 8, 111 (1966).

19. B.J. Baliga, J. Appl. Phys. 53, 1759 (1982).

20. M.A. Khan, J.N. Kuznia, J.M. Van Hove, N. Pan, and N. Carter, Appl. Phys. Lett. 60, 3027 (1992).

21. T. Sheppard, W.L. Fribble, D.T. Emerson, Z. Ring, R.P. Smith, S.T. Allen, and J.W. Palmour, Dev. Res. Conf. Dig. 37 (2000).

22. N.X. Nguyen, M. Micovic, W.-S. Wong, P. Hashimoto, L. M. McCray, P. Janke, and C. Nguyen, Electron. Lett. 36, 468 (2000).

23. Y.-F. Wu, D. Kapolnek, J.P. Ibbetson, P. Parikh, B.P. Keller, and U.K. Mishra, IEEE Trans. ED 48, 586 (2001).

24. W. Lu, J. Yang, M.A. Khan, and I. Adesida, IEEE Trans. ED 48, 581 (2001).

25. M.A. Khan, X. Hu, G. Simin, A. Lunev, J. Yang, R. Gaska, and M.S. Shur, IEEE ED Lett. 21, 63 (2000).

26. X. Hu, A. Koudymov, G. Simin, J. Yang, M.A. Khan, A. Tarakji, M.S. Shur, and R. Gaska, Appl. Phys. Lett. 79, 2832 (2001).

27. G. Simin, X. Hu, N. Ilinskaya, A. Kumar, A. Koudymov, J. Zhang, M.A. Khan, R. Gaska, and M.S. Shur, Electron. Lett. 36, 2043 (2000).

JERRY L. HUDGINS

Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208. E-mail: j.hudgins@ieee.org

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