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• Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN 

  We report on low-resistance and thermally stable Pd/Ru ohmic contacts to surface-treated p-GaN (3 x 10^sup 17^ cm^sup -3^). It is shown that...

  Journal of Electronic Materials, 09/01/02 by Jang, Ja-Soon; Lee, Chang-Won; Park, Seong-Ju; Seong, Tae-Yeon; Ferguson, I T · More from publication

• Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD 

  The effect of the growth pressure on the In incorporation in InGaN thin films, grown by metalorganic chemical vapor deposition (MOCVD) have been...

  Journal of Electronic Materials, 02/01/01 by Kim, Dong-Joon; Moon, Yong-Tae; Song, Keun-Man; Lee, In-Hwan; Park, Seong-Ju · More from publication

• Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN 

  The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-- step-surface-treated p-GaN have been investigated using...

  Journal of Electronic Materials, 02/01/01 by Jang, Ja-Soon; Kim, Dong-Jun; Park, Seong-Ju; Seong, Tae-Yeon · More from publication